Nanoscale (∼10nm) 3D vertical ReRAM and NbO 2 threshold selector with TiN electrode
作者： Euijun Cha , Jiyong Woo , Daeseok Lee , Sangheon Lee , Jeonghwan Song
DOI: 10.1109/IEDM.2013.6724602
关键词:
摘要: The scaling and 3-D integration issues of NbO2 with threshold switching characteristics were investigated for ReRAM selector device. To avoid the process problems Pt electrode, we tested devices conventional electrodes (TiN W). By adopting 10nm-thick TiN bottom electrode low thermal conductivity, could significantly reduce current insulator-metal transition (I-M-T) due to heat confinement effect. We have evaluated first time both 1S1R (NbO2/TaOx) hybrid (NbO2/Nb2O5) devices. confirmed feasibility high density vertical memory device by I-M-T
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