Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier

摘要: In this report, a fully integrated 3-D cross-point ReRAM is demonstrated with minimized disturbance and sneak current effect. HfO X memory cells stacked on threshold-type selector exhibit superb leakage suppression than exponential selector. Remaining diagnosed compensated by compensating write driver. Cells are prevented from lowering read voltage at hot temperature, which sacrifices margin. The margin recovered cell amplifier in circuit.