Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing

摘要: Reliability characteristics (retention and endurance) of RRAM are critical for its practical realization need to be improved. In this work, we confirmed the trade-off between retention endurance by using various top electrode thickness conditions. To improve both characteristics, proposed a new method high-pressure hydrogen annealing. Finally, obtained improved in HfO X based devices after annealing treatment.