Selective chemical vapor deposition of tungsten for microdynamic structures
作者： L.Y. Chen , Z.L. Zhang , J.J. Yao , D.C. Thomas , N.C. MacDonald
DOI: 10.1109/MEMSYS.1989.77966
关键词: Nanolithography 、 Beam (structure) 、 Nanotechnology 、 Materials science 、 Fabrication 、 Tungsten 、 Cantilever 、 Chemical vapor deposition 、 Silicon 、 Optoelectronics 、 Tweezers
摘要: A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional cantilever beams on a silicon substrate. Two form micromechanical tweezers that move in three dimensions by the application of potential differences between beams, and high-deposition-rate CVD greater than microns thickness patterned SiO/sub 2/ trenches ion-implanted with silicon. Tweezer 200- mu m length cross section 2.7 m*2.5 close an applied voltage less 150 V. The magnitude deflection beam profile are compared results obtained using simulations electric field dynamic mechanical tweezers. >
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