Theoretical analysis of the quantum photoelectric yield in Schottky diodes

摘要: Abstract A detailed analytical calculation of the photoelectric quantum yield in Schottky diodes is presented. The transport carriers surface space charge region treated explicitly, taking account photogeneration, diffusion and drift non-uniform electric field. Boundary conditions at interface are expressed terms recombination velocity emission excess into metal. It shown that metal-semiconductor strongly affects collection efficiency short wavelength generated electron-hole pairs. This effect basically originates flux majority Current, distributions yields computed using data AuCdTe barriers.