作者: L. A. Kosyachenko , I. S. Kabanova , V. M. Sklyarchuk , O. F. Sklyarchuk , I. M. Rarenko
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摘要: Schottky barrier photodiodes obtained by vacuum evaporation of the semi-transparent film over surface single crystalline Hg3In2Te6 substrates pre-treated Ar ion bombardment. The responsivity maximum is at wavelength 1.55 μm, corresponding to transmission window in silica glass fiber with minimal optical losses. dark current diodes determined generation-recombination processes space-charge region and quantitatively governed Sah–Noyce–Shockley theory. A comparison photoelectric parameters Ge reported. speed photodiode response range 10–8 s 10–7 s. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)