Materials and Photosensor Devices with High Radiation Stability

摘要: Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 HgTe. congruently melted as chemical compound. Like the crystal has cubic lattice with stoichiometric vacancies in structure. The electroconductivity, photoconductivity, mechanical, properties do not deteriorate after irradiation by γ-photons energies up to 1 MeV doses 1018 cm-2 , electrons 300 1019 mixed reactor (filtered slow neutrons) [1,2]. This feature is determined high concentration (~1021 cm-3) stoihiometric (Vs) structure, where every third In-cation node empty. These Vs electroneutral, they capture all impurity atoms these kept them electroneutral state too. On other hand this doesn't allow form direct p-n junctions introducing impurities. However, we have developed junction analogues Schottki diodes corresponding photodiodes semitransparent metal layer on single substrate that allows get into active region preserving way advantages compared junction.