Carrier localization, Anderson transitions and stripe formation in hole-doped cuprates

作者: S Dzhumanov , Z S Khudayberdiev

DOI: 10.1088/1742-6596/672/1/012017

关键词: Condensed matter physicsPairingPhysicsLattice (order)DielectricImpurityDopingCuprateDopant

摘要: Three distinctly different scenarios are proposed for the carrier localization in three- dimentional (3D) lightly doped cuprates which self-trapping and pairing of hole carriers (i) near small-radius dopants (ii) a defect-free deformable lattice lead to formation extrinsic intrinsic (bi)polaronic states charge-transfer gap cuprates, (iii) away from large-radius results in-gap hydrogenic impurity states. We have shown that 3D large bipolarons exist La-based at η = ɛ∞/ɛ0 < 0:127 0:138, respectively, where is optic (static) dielectric constant. use uncertainty relation obtain specificc conditions Anderson new MITs cuprates. The applicability limits these clarified. Our good agreement with existing experiments on

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