作者: S. Ono , Yoichi Ando , T. Murayama , F.F. Balakirev , J.B. Betts
DOI: 10.1016/S0921-4534(01)00187-3
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摘要: Abstract We measure the in-plane normal-state resistivity ρ ab of Bi 2 Sr 2− x La CuO 6+ δ single crystals down to 0.5 K with 60 T pulsed magnetic fields. observe a metallic behavior gradually changes an insulating one decreasing carrier concentration and this metal-to-insulator crossover takes place in underdoped region at approximately 1/8 hole concentration, not optimum doping as is reported for 4 . discuss possible source difference between two systems.