Non-monotonic dependence of the current density on the thickness of the photoactive layer

摘要: We have developed a mathematical model able to predict the dependence of current density, j0, in dc limit, on thickness photoactive semiconductor layer, d, contact with an electrolyte. The considers application external bias. theoretical analysis has been done by means diffusive model, where excess charges moves diffusion presence generation term, due incident light, and recombination proportional charge carriers. show that non-monotonic j0 vs. d is expected. For small photocurrent density proportionality constant related both attenuation light layer applied potential. In opposite limit large tends value dependent intensity Our predictions are qualitative agreement experimental data reported literature for BiVO4 films. © 2017 Elsevier B.V.