Vertical gate NAND memory devices
作者： Bruce Lynn Bateman
DOI:
关键词: Bubble memory 、 Stack (abstract data type) 、 Sense amplifier 、 Optoelectronics 、 Line (electrical engineering) 、 NAND gate 、 Electronic engineering 、 Memory cell 、 Physics
摘要: In an example, a device comprises vertical stack of memory cells. Each cell the may include more than one element. A first gate line be coupled to elements in each cell, and second cell. The electrically isolated from line.
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