Vertical Structure Non-Volatile Memory Device
作者： Sung-Min Hwang , Han-soo Kim
DOI:
关键词: Physics 、 Optoelectronics 、 Substrate (printing) 、 Transistor 、 Non-volatile memory 、 Line (electrical engineering) 、 Semiconductor 、 Electrical engineering 、 Memory cell
摘要: A vertical structure non-volatile memory device includes semiconductor regions that vertically extend on a substrate, plurality of cell strings the substrate along sidewalls and include cells at least one or more first selection transistors, which are disposed sides adjacent to another. wordlines is connected strings. line transistors insulating formed as air gaps between
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