Memory devices including vertical pillars and methods of manufacturing and operating the same
作者： Jae-Sung Sim , Jung-Dal Choi
DOI:
关键词: Optoelectronics 、 Electrical engineering 、 Vertical direction 、 Substrate (electronics) 、 Gate oxide 、 Semiconductor device 、 Dielectric 、 Materials science 、 Dielectric layer 、 Layer (electronics) 、 Vertical channel
摘要: In a semiconductor device and method of forming such device, the comprises substrate material extending in horizontal direction. A plurality interlayer dielectric layers is provided on substrate. gate patterns provided, each pattern between neighboring lower layer upper layer. vertical channel extends direction through patterns, insulating that insulates from channel, being contact with at region semiconducting region.
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