Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications
作者： Kent Bertilsson , Christopher Harris , Andrei Konstantinov
DOI:
关键词: Layer (electronics) 、 Field-effect transistor 、 MOSFET 、 Electrical engineering 、 Trench 、 Optoelectronics 、 Silicon carbide 、 Electrode 、 Gate oxide 、 Epitaxy 、 Materials science
摘要: A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in first layer, with base region and then source epitaxially regrown within the trench. window is through into middle area of contact regions. The gate layer on regions at peripheral surface layer. electrode above trench, drain over second
lens.org 参考文章(6)
Aram Mkhitarian, LDMOS structure with via grounded source ,(1998)
Holger Kapels, Helmut Strack, Hans-Joachim Schulze, Jenoe Tihanyi, Anton Mauder, Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method ,(2003)
Kevin Sean Matocha, Zachary Matthew Stum, Stephen Daley Arthur, Jody Alan Fronheiser, Larry Burton Rowland, Jesse Berkley Tucker, Method for fabricating silicon carbide vertical MOSFET devices ,(2006)
Eiichi Kariya Okuno, Toshio Kariya Sakakibara, Silicon carbide semiconductor device ,(2012)
Andrei Konstantinov, Christopher Harris, A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR ,(2000)
Katsunori Ueno, Method for manufacturing silicon carbide semiconductor device ,(1998)