作者: G Panomsuwan , O Takai , N Saito
DOI: 10.1088/0022-3727/45/49/494003
关键词: Ion beam 、 Substrate (electronics) 、 Crystallography 、 Sputter deposition 、 Thin film 、 Analytical chemistry 、 Layer (electronics) 、 Island growth 、 Materials science 、 Pole figure 、 Faceting
摘要: SrTiO3 (STO) thin films were grown on Pt/Al2O3 substrates without a Ti adhesion layer by an ion beam sputter deposition method in range of growth temperatures between 600 and 750??C. The effect temperature the film orientation was investigated high-resolution x-ray diffraction, pole figure measurements in-plane grazing incidence diffraction. showed strong dependence temperature. exhibited predominant (1?1?0) at low 600??C. With increase to 750??C, highly (1?1?1)-textured STO with two different variants achieved substrate. A narrow full-width half-maximum 0.12? for rocking curve measured 2?2?2STO reflection six-fold symmetry from {1?0?0}STO {1?1?0}STO figures observed. Three-dimensional island mode observed surfaces all films, as atomic force microscope. evolution grain shape size apparently found root-mean-square roughness 750??C raised be about 4?nm due surface faceting (1?1?1)-oriented grains. mechanism (1?1?0)- also explained discussed detail.