Enhanced memory window of Au/BaTiO 3 /SrTiO 3 /Si(001) MFIS structure with high c -axis orientation for non-volatile memory applications
作者： Gasidit Panomsuwan , Osamu Takai , Nagahiro Saito
DOI: 10.1007/S00339-012-7011-6
关键词: Memory window 、 Orientation (geometry) 、 Voltage 、 Non-volatile memory 、 Ferroelectricity 、 Ion beam 、 Optoelectronics 、 Sputter deposition 、 Materials science 、 Layer (electronics)
摘要: Metal–ferroelectric–insulator–semiconductor (MFIS) structures with BaTiO3 (BTO) as a ferroelectric film and SrTiO3 (STO) an insulating buffer layer were fabricated on p-type Si(001) substrates using ion beam sputter deposition technique. The effect of out-of-plane orientation the electrical properties MFIS structures, including leakage current density memory window behavior, studied growth BTO Si substrate buffered by highly c-axis-oriented random-oriented STO layers. experimental results show that orientations films almost identical to those structure high c-axis exhibited maximum clockwise capacitance-voltage 1.17 V low 1.05×10−7 A/cm2 at applied voltage 4 V, which is significant improvement compared random orientation. difference in both types discussed detail. obtained from this study indicate Au/BTO/STO/p-Si has good potential for use non-volatile applications.
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