Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

摘要: Type II arsenide/antimonide compound semiconductor with highly staggered GaAs 0.35 Sb 0.65 /In 0.7 Ga 0.3 As hetero-junction is used to demonstrate hetero tunnel FET (TFET) record high drive currents (I ON ) of 190µA/µm and 100µA/µm at V DS =0.75V 0.3V, respectively (L G =150nm). In x 1−x (x=0.53, 0.7) homo-junction TFETs 0.5 0.53 0.47 TFET moderate stagger are also fabricated the same process flow for benchmarking. Measured simulated performance benchmarked 40nm strained Si MOS-FETs 300mV logic applications.