Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon
作者： K. O. Hara , N. Usami , K. Toh , M. Baba , K. Toko
DOI: 10.1063/1.4759246
关键词: Time constant 、 Recombination 、 Excitation 、 Silicon 、 Auger effect 、 Molecular beam epitaxy 、 Semiconductor 、 Atomic physics 、 Photoconductivity 、 Materials science
摘要: Excess-carrier recombination mechanisms in undoped BaSi2 epitaxial films grown by molecular beam epitaxy on n-type silicon substrates have been studied the microwave-detected photoconductivity decay measurement. The measured excess-carrier is multiexponential, and we divided it into three parts terms of rate. Measurement with various excitation laser intensities indicates that initial rapid due to Auger recombination, while second mode approximately constant Shockley-Read-Hall recombination. Slow third attributed carrier trapping effect. To analyze formulae are developed calculate effective lifetime (time decay) from average concentration. measurement thickness 50–600 nm shows slower thicker films, which consistent formulae. By fitting calcul...
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