A new methodology for separating Shockley-Read-Hall lifetime and Auger recombination coefficients from the photoconductivity decay technique

摘要: A new methodology involving the measurement and integration of photoconductivity decay (PCD) carriers is developed to separate surface recombination velocity (S), Shockley–Read–Hall lifetime (τSRH), trap‐assisted Auger (Bt), band‐to‐band (C) coefficients in semiconductors. Conventional differentiation used past not only suffers from potential errors due digitized injection level versus time transient, N=f(t), but also difficulty assessing because models or equations are fit differentiated data, τeff(N), rather than raw experimental data [N=f(t)]. In this methodology, first a mathematical equation derived by general expression with various express carrier as function level, t=f(N). The Levenberg–Marquardt numerical method then m...