Record high recombination lifetime in oxidized magnetic Czochralski silicon
作者： S. K. Pang , A. Rohatgi
DOI: 10.1063/1.106407
关键词:
摘要: This letter demonstrates that recombination lifetimes in excess of 5 ms can be achieved the oxidized magnetic Czochralski (MCZ) silicon by a combination high‐purity crystal growth, proper cleaning and oxidation conditions. Lifetime studies were conducted at room temperature on as‐grown as well 2000 Ω cm low oxygen (∼5 ppm) MCZ an injection sensitive, contactless photoconductive decay technique with controlled injected carrier densities up to 1017 cm−3. Record Shockley–Read–Hall 8.5 6.6 wafers, respectively. However, (CZ) 14.2 ppm gave lifetime only 200 μs due much higher concentrations process‐induced defects. versus level analysis ambipolar Auger C coefficient 1.1×10−30 (±9%) cm6 s−1 before after both CZ silicon. Unlike coefficient, B (radiative band‐to‐band + trap‐assisted Auger) low‐oxygen was found four times smaller than value high
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