SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS

摘要: Continuous downscaling of integrated circuits brought an end to the era SiO2. In gate dielectrics, it is being replaced by materials with high dielectric constant, so-called high-k dielectrics. One challenges in integration material removal those selectively over substrate. This work one first attempts review current state art removal. Two main approaches are discussed: dry (plasma) and wet First, fundamentals limitations both presented, then overview existing experimental data given. It concluded that best results could be obtained combining approaches.