Thickness evaluation of InGaAs/InAlAs quantum wells

摘要: This work proposes a new optoelectronic measurement of quantum well (QW) thickness and applies it to doped undoped In0.53Ga0.47As/In0.52Al0.48As multiple-QW structures. Near-infrared spectroscopic identification the interband optical transition at 100–300 K gave eigenenergies conduction band in QW. Evaluation QW involved analysis effective mass corresponding eigenenergy. thicknesses range 5.45–20.8 nm were determined six different wafers. These agreed with estimated by double-crystal x-ray diffraction within almost two monolayers. was used determine distance potential boundaries confining electron wave functions.