作者: Nobuo Kotera , Koichi Tanaka , Hitoshi Nakamura , Mineo Washima
DOI: 10.1063/1.2932087
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摘要: Nonparabolicity of the conduction band in In0.53Ga0.47As was analyzed using nanoscale InGaAs/InAlAs multi quantum well structures. The nonparabolic effective mass determined from a set eigen-energies single finite-square-well model. Conduction-band were obtained by analyzing interband optical transition spectra photocurrent and photoreflectance. Regarding mass, Kane’s theory applicable over wide range 0 to 0.5 eV. Based on theory, size electron wave function with resolution 0.1 nm. This method provides direct means determine thickness.