Luminescence excitation spectroscopy on Ga 0.47 In 0.53 As/ Al 0.48 In 0.52 As quantum-well heterostructures

摘要: We have performed low-temperature (5\char21{}30 K) photoluminescence excitation spectroscopy on ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48}$ ${\mathrm{In}}_{0.52}$As quantum-well heterostructures lattice matched to InP which were grown by molecular-beam epitaxy. Excitation using a tunable KCl:Tl color-center laser allows us measure the energy shift of first electron heavy-hole subband transition in absorption for widths down 10 nm. In samples with well 25 and 35 nm, higher transitions are also identified spectrum. Comparison experimental shifts calculated data shows good agreement when finite square-well potential conduction- valence-band discontinuities 0.5 0.2 eV, respectively, is assumed. This band offset consistent determined C-V profiling technique.