Picosecond photoinduced index changes in a-Si:H and related alloys measured by transient grating experiments
作者： Gert Noll , Ernst O. Göbel
DOI: 10.1016/0022-3093(87)90033-0
关键词: Analytical chemistry 、 Signal 、 Materials science 、 Amorphous solid 、 Grating 、 Relaxation (NMR) 、 Recombination 、 Picosecond 、 Transient (oscillation) 、 Refractive index 、 Molecular physics
摘要: Abstract We report on transient grating experiments amorphous films as a sensitive technique to study refractive index changes due carrier relaxation processes. The are performed a-Si:H and a-SiC:H samples at room temperature with time resolution of 10 ps. observed fast component the signal is attributed capture carriers from extended states into localized within slow decay reflects deeper tail or traps recombination verified by different defect densities.
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