作者: Shuji Komuro , Yoshinobu Aoyagi , Yusaburo Segawa , Susumu Namba , Akio Masuyama
DOI: 10.1063/1.93733
关键词:
摘要: We have found that a picosecond time relaxation of photoexcited carriers appears after an optical illumination in glow discharge hydrogenated amorphous silicon. The origin this rapid is qualitatively explained by the excited to increased shallow localized states illumination. experimental results been analyzed multiple trapping mechanism taking into account and deep states.