Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures
作者： K. Morigaki , I. Hirabayashi , M. Nakayama , S. Nitta , K. Shimakawa
DOI: 10.1016/0038-1098(80)91204-1
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摘要: Abstract Fatigue in the luminescence was observed glow discharge amorphous silicon at 4.2 K and 77 K. This fatigue not recovered by infra-red illumination, but heating sample higher temperatures. These results are interpreted terms of enhancement non-radiative recombination associated with dangling bonds created high optical excitation.
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