Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon

摘要: Long exposure to light decreases the photoconductivity and dark conductivity of some samples hydrogenated amorphous silicon (a‐Si : H). Annealing above ∼150 °C reverses process. The effect occurs in bulk films, is associated with changes density or occupation deep gap states. High concentrations P, B, As quench effect. Possible models involving hydrogen bond reorientation at a localized defect electron‐charge transfer between defects are discussed. An example shown where these do not affect efficiency an a‐Si : H solar cell.