Automated nanomanipulation for nano device construction

摘要: Nanowire field-effect transistors (nano-FETs) are nano devices capable of highly sensitive, label-free sensing molecules. However, significant variations in sensitivity across can result from poor control over device parameters, such as nanowire diameter and the number electrode-bridging nanowires. This paper presents a fabrication approach that uses wafer-scale contact printing for throughput automated nanomanipulation precision diameter. The process requires only one photolithography mask. Using post processing (i.e., inside scanning electron microscope), we able to produce all with single similar diameters at speed ∼1 min/device success rate 95% (n=500). technology represents seamless integration microfabrication nanorobotic manipulation producing nano-FET sensors consistent response devices.