作者: Robert Thomas Long , Akella V. S. Satya , Li Song , Kurt H. Weiner
DOI:
关键词: Wafer 、 Semiconductor 、 Hot-carrier injection 、 Failure rate 、 Gate oxide 、 Semiconductor device 、 Materials science 、 Reliability (semiconductor) 、 Reliability engineering 、 Electromigration
摘要: Disclosed are methods and apparatus for determining whether to perform burn-in on a semiconductor product, such as product wafer or lot. In general terms, test structures the inspected extract yield information, defect densities. Since this information is related early extrinsic instantaneous failure rate, one may then determine rate more mechanisms, electromigration, gate oxide breakdown, hot carrier injection, based information. It determined rate.