3D memory process and structures

作者: Erh-Kun Lai , Chia-Jung Chiu , Chieh Lo

DOI:

关键词: Process (computing)Optoelectronics3d memoryStack (abstract data type)Substrate (printing)TransistorSemiconductor deviceMaterials scienceElectrical engineering

摘要: A semiconductor device includes a substrate, stack structure and transistor. The substrate first region second region. is formed over the in transistor has gate bottom portion of disposed at height from that less than between structure.

参考文章(10)
Masaaki Higashitani, Peter Rabkin, 3D Non-Volatile Memory With Metal Silicide Interconnect ,(2014)
Hideaki Aochi, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada, Yoshiaki Fukuzumi, Shigeki Hattori, Satoshi Mikoshiba, Reika Ichihara, Hiroyuki Fuke, Masaya Terai, Nonvolatile semiconductor memory device and method for manufacturing same ,(2010)
Chen Jung, Guo Di-Sheng, Lin Chung-Rung, Su Hung-De, Process for embeded flash memory ,(2000)
Wonseok Cho, Changseok Kang, Jae-Joo Shim, Sung-Min Hwang, Hansoo Kim, Three dimensional semiconductor memory devices ,(2011)
Jae-Hwang Sim, Sangbin Song, Minchul Kim, Non-volatile memory device and method of fabricating the same ,(2012)
Yool-Guk Kim, Jong-Dae Lee, Jea-gun Park, Sung-Ho Seo, Young-Hwan Oh, Hyun-Min Seung, Woo-Sik Nam, Non-volatile memory device and method for fabricating the same ,(2008)