Preparation ofCuInSe2Thin Films by Chemical Spray Pyrolysis

作者: Sho Shirakata , Tomonori Murakami , Tetsuya Kariya , Shigehiro Isomura

DOI: 10.1143/JJAP.35.191

关键词: ChalcopyriteSphaleriteAqueous solutionPyrolysisChemical engineeringAbsorption spectroscopySubstrate (chemistry)Thin filmAbsorption (chemistry)Inorganic chemistryChemistryGeneral EngineeringGeneral Physics and Astronomy

摘要: CuInSe2 thin films have been prepared by chemical spray pyrolysis (CSP) on glass substrate from the ethanol aqueous solution containing CuCl2, InCl3 and N,N-dimethylselenourea. Properlies of (electrical, structural, optical absorption morphological properties) systematically studied in terms temperature (T s), pH ion ratio (Cu/In) solution. Good chalcopyrite with large grains grown using neutralized (pH=4) at growth 360° C. On other hand, low values T s, Cu/In led to production sphalerite films.

参考文章(6)
H. Tanino, T. Maeda, H. Fujikake, H. Nakanishi, S. Endo, T. Irie, Raman spectra of CuInSe2. Physical Review B. ,vol. 45, pp. 13323- 13330 ,(1992) , 10.1103/PHYSREVB.45.13323
J. D. Meakin, T. J. Coutts, Current topics in photovoltaics Academic Press. ,(1985)
A GUPTA, S SHIRAKATA, S ISOMURA, Studies on CuIn precursor for the preparation of CuInSe2 thin films by the selenization technique Solar Energy Materials and Solar Cells. ,vol. 32, pp. 137- 149 ,(1994) , 10.1016/0927-0248(94)90299-2
M. Gorska, R. Beaulieu, J.J. Loferski, B. Roessler, J. Beall, Spray pyrolysis of CuInSe2 thin films Solar Energy Materials. ,vol. 2, pp. 343- 347 ,(1980) , 10.1016/0165-1633(80)90010-6
Satoshi Yamanaka, Masayuki Tanda, Nobuyuki Nakada, Akira Yamada, Makoto Konagai, Kiyoshi Takahashi, Study of CuInSe2Formation Kinetics in the Selenization Process by Raman Spectroscopy Japanese Journal of Applied Physics. ,vol. 30, pp. 442- 446 ,(1991) , 10.1143/JJAP.30.442
Andrew M. Gabor, John R. Tuttle, David S. Albin, Miguel A. Contreras, Rommel Noufi, Allen M. Hermann, High‐efficiency CuInxGa1−xSe2solar cells made from (Inx,Ga1−x)2Se3precursor films Applied Physics Letters. ,vol. 65, pp. 198- 200 ,(1994) , 10.1063/1.112670