作者: M Krunks , O Kijatkina , H Rebane , I Oja , V Mikli
DOI: 10.1016/S0040-6090(01)01534-6
关键词: Inorganic chemistry 、 Nuclear chemistry 、 Fourier transform infrared spectroscopy 、 Thin film 、 Impurity 、 Elemental analysis 、 Chemical composition 、 Pyrolysis 、 Crystallinity 、 Chemistry 、 Annealing (metallurgy)
摘要: CuInS 2 films were prepared by spray pyrolysis technique using CuCl , InCl 3 and SC(NH ) as initial chemicals. The content of Cl, O, C N impurities in sprayed measured EDS, WDS, RBS organic elemental analysis. growth temperatures 260-280°C result C, 8 mass% the impurity phases contain SCN, CN, NH, SO 4 groups identified FTIR. increase temperature up to 380°C decreases concentration 1-2 mass%, concurrently leading oxidation inorganic resulting O 16.7 at.%. originated from precursors is mainly controlled less extent Cu/In ratio solution Cu-rich solutions with reduced residues. Thermal treatments reducing atmospheres at 450°C improves crystallinity while annealing flowing H effectively reduces Cl impurities.