作者: David B Mitzi
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摘要: A method of depositing a film metal chalcogenide. The first these methods includes the steps of: contacting at least one chalcogenide, hydrazine compound and optionally, an elemental chalcogen, to produce solution hydrazinium-based precursor chalcogenide; applying chalcogenide onto substrate precursor; thereafter annealing remove excess hydrazinium salts on substrate. second contacting: salt amine ammonium-based compound, in compound; film; thereafter, film. Also provided is thin-film field-effect transistor device using chalcogenides as channel layer.