Time-of-flight studies on TiO2/CuInS2 heterojunctions

摘要: Time-of-Flight (TOF) measurements have been performed on n-type TiO2/p-type CuInS2 heterojunctions. The TiO2 film thickness has varied between 200 and 400 nm, while the fixed at 500 nm. TOF response can be accurately modeled, if potential drop across p-n heterojunction with a large density of interface states is properly accounted for. Also electron transport in space-charge region for not fully depleted semiconductor to considered. mobility found 10−2 cm2 V−1 s−1, independent layer thickness. interface-state densities are 5×1011, 2×1012, 6×1012 eV−1 cm−2 200, 300, nm thick films, respectively.