Electrical properties of thin-film semiconductor heterojunctions n-TiO2/p-CuInS2
作者： VV Brus , IG Orletsky , MI Ilashchuk , PD Maryanchuk , None
DOI: 10.1134/S1063782614080077
关键词: Semiconductor 、 Charge (physics) 、 Reactive magnetron 、 Optoelectronics 、 Surface states 、 Sputtering 、 Thin film 、 Materials science 、 Heterojunction
摘要: Anisotype thin-film heterojunctions n-TiO2/p-CuInS2 are fabricated by spray-pyrolysis and dc reactive magnetron sputtering. The electrical optical properties of thin CuInS2 films deposited spraypyrolysis in strictly controlled modes examined. Also, the Mo/CuInS2 rear contact studied means measurements three-probe method. dominant charge transport mechanism forward- reverse-biased is determined. This well interpreted terms tunneling-recombination model via surface states at heterointerface defects space-charge region.
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