Photoreflectance determination of the wetting layer thickness in the InxGa1−xAs∕GaAs quantum dot system for a broad indium content range of 0.3–1
作者： G. Sęk , P. Poloczek , K. Ryczko , J. Misiewicz , A. Löffler
DOI: 10.1063/1.2364604
关键词: Quantum dot 、 Effective mass (solid-state physics) 、 Quantum well 、 Materials science 、 Ground state 、 Molecular beam epitaxy 、 Gallium arsenide 、 Spontaneous emission 、 Condensed matter physics 、 Wetting layer
摘要: We have investigated a set of InxGa1−xAs∕GaAs quantum dot structures grown by solid source molecular beam epitaxy for wide range In content ranging from 30% to pure InAs∕GaAs dots. It is well known that in self-assembled growth mode, the dots are formed on thin layer InxGa1−xAs material, which called wetting (WL). The WL thickness driven strain, i.e., lattice mismatch between and substrate materials. Usually, not optically active emission type experiments (the whole radiative recombination goes through states) even if so, heavy hole ground state transition probed only. order detect all possible transitions, e.g., transitions related light higher states (including those nominally parity forbidden), we used modulation spectroscopy form photomodulated reflectivity measurements. This an absorptionlike method, has been proven t...
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