Analysis and improvement of the position nonlinearity caused by a residual stress in MOS-type position-sensitive detectors with indium tin oxide gate contact
作者： H-E Nilsson , H A Andersson , N Bylund , G Thungström
DOI: 10.1088/0268-1242/23/7/075012
关键词: Visible spectral range 、 Degenerate semiconductor 、 Detector 、 Nonlinear system 、 Stress induced 、 Indium tin oxide 、 Residual stress 、 Linearity 、 Optoelectronics 、 Materials science
摘要: In this paper, lateral effect position-sensitive detectors based on the MOS principle have been fabricated in lengths of 15 mm, 45 mm and 60 mm. The gate contact covering active area consists indium tin oxide which is a degenerate semiconductor transparent visible spectral range. Characterization analysis both performed especially with particular focus nonlinearity believed to be caused by stray stress induced inversion channel originating contact. Stress will change resistance non-uniform manner because piezoresistance effect, thus causing position determination. It has shown that heat treatment greatly influences linearity detectors. A correctly results within ±0.1% ±0.15% over 60% length. This an improvement previous type detector. By performing timed PSD potential used common position-sensing applications.
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