The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy

摘要: Al1−xInxAs films have been grown by molecular beam epitaxy (MBE) on InP substrates. Unintentionally doped material had a free electron concentration of the order 1×1016 cm−3 when above 560 °C but was semi‐insulating below 520 °C. The effects substrate temperature and group V to III flux ratio during growth electrical properties 4 K cathodoluminescence are reported. Auger spectroscopy (AES) profiles through show that loss indium is detectable only at temperatures in excess 600 °C for As4/group ratios 15–20:1. optimum MBE 580 °C. Cathodoluminescence used measure band gap epitaxial layers as function In content values x between 0.46 0.55. Over this range, room energy found vary Eg(300 K)=1.450+2.29(0.523−x) eV, while relation measured be Eg(4 K)=1.508+2.22(0.523−x) eV. ...