Electrical and structural characterization of highly perfect semi-insulating InAlAs grown by molecular beam epitaxy
作者： A.T. Macrander , S.J. Hsieh , F. Ren , J.S. Patel
DOI: 10.1016/0022-0248(88)90437-X
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摘要: Abstract Transport measurement made in the temperature range 28–97°C on very well lattice matched layers grown (100) oriented Inp substrates are reported. The were not doped intentionally. An ohnmic regime was clearly observed at all temperatures. Room resistivities as high 1.2 × 10 8 ω cm found. This is believed to be highest value reported date. resistivity found thermally activated with an activation energy of 0.75±0.01 eV. X-ray double crystal linewidth 17.5 arc sec for a 1.0 μm thick layer also which lowest
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