Alloy disorder broadening of defect energy levels
作者： B.M. Arora
DOI: 10.1016/0038-1098(87)90937-9
关键词: Alloy 、 Deep-level transient spectroscopy 、 Energy (signal processing) 、 Electron beam processing 、 Chemistry 、 Condensed matter physics 、 Analytical chemistry
摘要: Abstract The deep level transient spectroscopy (DLTS) peaks are broader in the alloys than binary III–V compounds. This effect is related to substitutional disorder present alloy which changes sharp energy levels into a distribution. In this Communication we give relations between broadened DLTS signal, defect broadening and with particular reference electron irradiation induced E3 GaAs1xSbx alloys.
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