Origin of an E 3 -like defect in GaAs and Ga As 1 − x Sb x alloys

摘要: Energy level and concentration of $E3$ defects produced by electron bombardment have been measured in various $\mathrm{Ga}{\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$ alloys ($x=0 \mathrm{to} 0.2$). The average defect introduction rate reduces with decrease the arsenic atom fraction suggesting that are As-site related. energy remains constant (\ensuremath{\sim} 1.0 eV) respect to top valence band these alloys. Results theoretical calculations presented which support assignment a related ${V}_{\mathrm{As}}$.