Enhancement of a-IZO TTFT Performance by Using Y2O3 ∕ Al2O3 Bilayer Dielectrics
作者： Ai Hua Chen , Ling Yan Liang , Hai Zhong Zhang , Zhi Min Liu , Xiao Juan Ye
DOI: 10.1149/1.3519412
关键词: Amorphous solid 、 Optoelectronics 、 Dielectric 、 Silicon 、 Semiconductor 、 Thin-film transistor 、 Penning trap 、 Bilayer 、 Materials science 、 Microelectronics
摘要: A comparison study was performed on radio frequency sputtered amorphous In-Zn-O transparent thin-film transistors (a-IZO TTFTs) using Y2O3 and Y2O3/Al2O3 dielectrics. has strong affinity for water carbon dioxide molecules present in the air, which would induce a great deal of Y-O center dot electron traps at Y2O3/a-IZO interface ruin device performance eventually. It is proposed that an Al2O3 capping layer utilized to avoid chemical reaction surface Y2O3, then detrimental effects yield trap states are circumvented. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3519412] All rights reserved.
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