作者: Burag Yaglioglu , Hyo-Young Yeom , David C. Paine
DOI: 10.1063/1.1977209
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摘要: We report on the crystallization of amorphous indium zinc oxide (a-IZO) with stoichiometry In2Zn0.38O3.38 (In2O3–10 wt % ZnO) thin films deposited by dc magnetron sputtering. Transmission electron microscopy and glancing incidence x-ray diffraction were used to show that, when annealed in air at 500 °C, product a-IZO film is a compositionally modulated crystal high-pressure corundum In2O3 phase. The composition, microstructure, resistivity, carrier density, mobility this new IZO phase are reported compared bixbyite ITO (In2O3–9.8wt%SnO2) under identical conditions.