An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization
作者： L. Di Cioccio , P. Gueguen , R. Taibi , D. Landru , G. Gaudin
DOI: 10.1149/1.3577596
关键词: Toughness 、 X-ray reflectivity 、 Direct bonding 、 Anodic bonding 、 Nanotechnology 、 Copper 、 Materials science 、 Metallic bonding 、 Annealing (metallurgy) 、 Dielectric
摘要: An overview of the different metal bonding techniques used for 3D integration is presented. Key parameters such as surface preparation, temperature and duration annealing, achievable wafer-to-wafer alignment electrical results are reviewed. A special focus done on direct patterned metal/dielectric surfaces. mechanism copper proposed based toughness measurements, SAM, XRR, XRD, TEM analysis. Dedicated characterization
ecsdl.org参考文章(16)
Kuan-Neng Chen, Chuan Seng Tan, Andy Fan, L. Rafael Reif, Cu Wafer Bonding for 3D IC Applications Springer, Boston, MA. pp. 1- 14 ,(2008) , 10.1007/978-0-387-76534-1_6
Rustum Roy, H. J. Leamy, C. W. White, E. N. Kaufmann, R. L. Schwoebel, K. C. Taylor, C. J. Northrup, Materials Research Society Physics Today. ,vol. 37, pp. 87- 89 ,(1984) , 10.1063/1.2916117
K. N. Chen, C. S. Tan, A. Fan, R. Reif, Copper bonded layers analysis and effects of copper surface conditions on bonding quality for three-dimensional integration Journal of Electronic Materials. ,vol. 34, pp. 1464- 1467 ,(2005) , 10.1007/S11664-005-0151-0
Steven E. Steen, Douglas LaTulipe, Anna W. Topol, David J. Frank, Kevin Belote, Dominick Posillico, Overlay as the key to drive wafer scale 3D integration Microelectronic Engineering. ,vol. 84, pp. 1412- 1415 ,(2007) , 10.1016/J.MEE.2007.01.231
Kenneth Diest, Melissa J. Archer, Jennifer A. Dionne, Young-Bae Park, Matthew J. Czubakowski, Harry A. Atwater, Silver diffusion bonding and layer transfer of lithium niobate to silicon Applied Physics Letters. ,vol. 93, pp. 092906- ,(2008) , 10.1063/1.2976560
Pierric Gueguen, Léa Di Cioccio, Patrice Gergaud, Maurice Rivoire, Daniel Scevola, Marc Zussy, Anne Marie Charvet, Laurent Bally, Dominique Lafond, Laurent Clavelier, Copper Direct-Bonding Characterization and Its Interests for 3D Integration Journal of The Electrochemical Society. ,vol. 156, ,(2009) , 10.1149/1.3187271
J. B. Lasky, Wafer bonding for silicon‐on‐insulator technologies Applied Physics Letters. ,vol. 48, pp. 78- 80 ,(1986) , 10.1063/1.96768
Rajappa Tadepalli, Carl V. Thompson, Formation of Cu–Cu interfaces with ideal adhesive strengths via room temperature pressure bonding in ultrahigh vacuum Applied Physics Letters. ,vol. 90, pp. 151919- ,(2007) , 10.1063/1.2720297
Pierric Gueguen, Caroline Ventosa, Léa Di Cioccio, Hubert Moriceau, François Grossi, Maurice Rivoire, Patrick Leduc, Laurent Clavelier, Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration Microelectronic Engineering. ,vol. 87, pp. 477- 484 ,(2010) , 10.1016/J.MEE.2009.07.030
B. Charlet, L. Di Cioccio, J. Dechamp, M. Zussy, T. Enot, R. Canegallo, A. Fazzi, R. Guerrieri, L. Magagni, Chip-to-chip interconnections based on the wireless capacitive coupling for 3D integration Microelectronic Engineering. ,vol. 83, pp. 2195- 2199 ,(2006) , 10.1016/J.MEE.2006.10.052