200°C direct bonding copper interconnects : Electrical results and reliability
作者： L. Di Cioccio , R. Taibi , C. Chappaz , S. Moreau , L. L. Chapelon
DOI: 10.1109/3DIC.2012.6262976
关键词:
摘要: Copper direct bonding is one of the most promising approaches for three dimensional integrated circuits (3D IC). This process has reached a maturity already reported in publications wafer to and die stacking. Anyway, its reliability be demonstrated. In this paper Electromigration (EM) Stress Induced Voiding (SIV) tests are also performed on 200°C bonded daisy chains investigate behaviour such structures, first electrical dies reported.
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