Copper direct bonding: An innovative 3D interconnect
作者： Pierric Gueguen , Lea Di Cioccio , Panagiota Morfouli , Marc Zussy , Jerome Dechamp
DOI: 10.1109/ECTC.2010.5490697
关键词:
摘要: 3D technology will be the next step for development of microelectronic devices. Vertical interconnection is one challenging issues. Cu/SiO 2 patterned surface might possible techniques to address it. In this work, direct surfaces bonding at room temperature, atmospheric pressure and ambient air demonstrated. High alignment quality achieved both Wafer (WtW) Die (DtW) bonding. Electrical characterizations Cu/Cu contacts are presented multiple contact areas post annealing temperature. The specific resistance lowered down ρ c =47 mΩ.µm2 3×3µm2 on Kelvin structures.
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