Oxidation of RuAl and NiAl Thin Films: Evolution of Surface Morphology and Electrical Resistance

摘要: RuAl and NiAl thin films on SiO2/Si were oxidized, the results compared to those from aluminum, ruthenium, nickel films. Both aluminides are more oxidation resistant than nickel, they form an outer layer of alumina after 850 °C. The depth profiles differ for RuAl, with alternating layers a Ru-rich phase forming while complex structure forms due reaction substrate. surface remains fairly smooth reflective, whereas has hazy appearance. However, morphology changes at slightly lower temperature in case (~ 500°C) . remain conductive even begins show signs oxidation, remaining higher (after 1 h °C) RuAl. that can be used oxidizing atmosphere up ~ 500°C (at least h) applications requiring reflective temperatures when quality is less important but conductivity needs maintained 800°C 850°C NiAl).