Electrostatic discharge protection circuits including circumferential guard rings
作者： Sae-Choon Oh
DOI:
关键词: Optoelectronics 、 Guard (information security) 、 Integrated circuit 、 Electrostatic discharge 、 Electronic circuit 、 Materials science 、 Electrical engineering 、 Electrostatic discharge protection 、 Guard ring 、 Circumference 、 Diode
摘要: Electrostatic discharge (ESD) protection circuits include first and second pads on an integrated circuit well regions in the substrate. The respective circumferences or walls. First diodes are included regions. serially connected between pads. A guard ring is adjacent circumference, preferably well. diode within ring. also most of conductivity type, ESD further includes a third region type substrate, rings at higher concentration than
lens.org 参考文章(3)
Ming-Dou Ker, Tain-Shun Wu, Latchup-free fully-protected CMOS on-chip ESD protection circuit ,(1995)
W. Ronald Young, Michael A. Bohm, ESD protection network for IGFET circuits with SCR prevention guard rings ,(1986)
David S. Culver, Tsiu C. Chan, ESD protection circuit ,(1992)