Latchup-free fully-protected CMOS on-chip ESD protection circuit
作者： Ming-Dou Ker , Tain-Shun Wu
DOI:
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摘要: An ESD protection circuit fully protects the input stage of CMOS integrated circuits from four different stress modes by providing direct discharging paths. The has a primary circuit, which first and second thick-oxide MOS devices, secondary resistor, thin-oxide devices. resistor is connected between circuits. each provide two discharge paths pad, internal to be protected, VDD VSS voltage supply buses. inventive also merged latchup guard rings against large ESDs, while occupying only small layout area. Furthermore, clamps level signal 5.5 -1 volts, voltages applied
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